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bbf-melt-pmd-measurement-parameter-body@2019-06-11



  submodule bbf-melt-pmd-measurement-parameter-body {

    yang-version 1.1;

    belongs-to bbf-melt {
        prefix bbf-melt;
    }

    include bbf-melt-pmd-profile-body;
    include bbf-melt-base;

    organization
      "Broadband Forum <https://www.broadband-forum.org>
Common YANG Work Area";

    contact
      "Comments or questions about this Broadband Forum YANG module
should be directed to <mailto:help@broadband-forum.org>.

Editor:      Ken Kerpez, ASSIA, Inc.

Editor:      Joey Boyd, ADTRAN

PS Leader:   Ken Kerpez, ASSIA, Inc.

PS Leader:   Joey Boyd, ADTRAN

WA Director: Sven Ooghe, Nokia

WA Director: Joey Boyd, ADTRAN";

    description
      "This submodule contains a collection of YANG definitions for
Metallic Line Test Physical Medium Dependent (MELT-PMD)
measurement parameters.

Copyright (c) 2016-2019 Broadband Forum

Redistribution and use in source and binary forms, with or
without modification, are permitted provided that the following
conditions are met:

1. Redistributions of source code must retain the above copyright
   notice, this list of conditions and the following disclaimer.

2. Redistributions in binary form must reproduce the above
   copyright notice, this list of conditions and the following
   disclaimer in the documentation and/or other materials
   provided with the distribution.

3. Neither the name of the copyright holder nor the names of its
   contributors may be used to endorse or promote products
   derived from this software without specific prior written
   permission.

THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND
CONTRIBUTORS "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR
CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,
SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT
NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES;
LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT,
STRICT LIABILITY, OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE)
ARISING IN ANY WAY OUT OF THE USE OF THIS SOFTWARE, EVEN IF
ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.

The above license is used as a license under copyright only.
Please reference the Forum IPR Policy for patent licensing terms
<https://www.broadband-forum.org/ipr-policy>.

Any moral rights which are necessary to exercise under the above
license grant are also deemed granted under this license.

This version of this YANG module is part of TR-355a2; see
the TR itself for full legal notices.";

    revision "2019-06-11" {
      description
        "Amendment 2.
* Approval Date:    2019-06-11
* Publication Date: 2019-06-11.";
      reference
        "TR-355a2: YANG Modules for FTTdp Management
        	  <https://www.broadband-forum.org/technical/download/
        		 TR-355_Amendment-2.pdf>";

    }

    revision "2018-10-01" {
      description
        "Amendment 1.
* Approval Date:    2018-10-01
* Publication Date: 2018-10-01.";
      reference
        "TR-355a1: YANG Modules for FTTdp Management
        	  <https://www.broadband-forum.org/technical/download/
        		 TR-355_Amendment-1.pdf>";

    }

    revision "2017-11-27" {
      description
        "Corrigendum 2 (fixes to the previous revision).
* Approval Date:    see revision date above.
* Publication Date: 2018-01-19.";
      reference
        "TR-355c2: YANG Modules for FTTdp Management
        	  <https://www.broadband-forum.org/technical/download/
        		 TR-355_Corrigendum-2.pdf>";

    }

    revision "2016-07-18" {
      description
        "Initial revision.
* Approval Date:    see revision date above.
* Publication Date: 2016-08-05.";
      reference
        "TR-355: YANG Modules for FTTdp Management
        	<https://www.broadband-forum.org/technical/download/
        		 TR-355.pdf>";

    }


    identity melt-cdcr {
      base measurement-class;
      description
        "The 4-element DC resistance with controlled metallic
voltage";
      reference
        "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-xx)";

    }

    identity melt-cc {
      base measurement-class;
      description
        "The 3-element capacitance with controlled metallic voltage";
      reference
        "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-xx)";

    }

    identity melt-fvdc {
      base measurement-class;
      description "The foreign DC voltage";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-xx)";

    }

    identity melt-fvac {
      base measurement-class;
      description "The foreign AC voltage";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-xx)";

    }

    identity melt-hc {
      base measurement-class;
      description "The loop capacitance";
      reference
        "ITU-T G.996.2 clause E.2.3.6 (MELT-HC-xx)";

    }

    identity melt-hdcr {
      base measurement-class;
      description
        "The loop resistance with high metallic voltage";
      reference
        "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-xx)";

    }

    identity melt-ca {
      base measurement-class;
      description
        "The 3-element complex admittance with controlled
metallic voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.9 (MELT-CAx-xx)";

    }

    identity melt-ha {
      base measurement-class;
      description
        "The loop complex admittance with high
metallic voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.10 (MELT-HAx-xx)";

    }

    typedef four-element-dc-resistance {
      type uint32 {
        range "0..10000000";
      }
      units "1 ohm";
      description
        "The 4-element DC resistances, RTR (Tip-to-Ring), RRT
(Ring-to-Tip), RTG (Tip-to-Ground), and RRG (Ring-to-Ground),
shall be represented in linear format. The range of valid
values is from 0 to 10 Mohms with a granularity of 1 ohm.";
      reference
        "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR, MELT-CDCR-RT,
        MELT-CDCR-TG, MELT-CDCR-RG)";

    }

    typedef three-element-capacitance {
      type int32 {
        range "-20000..50000";
      }
      units "0.1 nF";
      description
        "The 3-element capacitances, CTR (Tip-to-Ring), CTG
(Tip-to-Ground), and CRG (Ring-to-Ground), shall be represented
in linear format. The range of valid values is from -2 to 5 uF
with a granularity of 0.1 nF.";
      reference
        "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR, MELT-CC-TG,
        MELT-CC-RG)";

    }

    typedef foreign-dc-voltage {
      type int16 {
        range "-3500..3500";
      }
      units "100 mV";
      description
        "The range of valid values for the foreign DC voltages,
VTR-DC (Tip-to-Ring), VTG-DC (Tip-to-Ground), and VRG-DC
(Ring-to-Ground) is from -350 to 350V. The foreign DC voltage
shall be represented in linear format with a granularity of
100 mV.

The reported DC voltage polarity is defined with respect to
ground for the VTG-DC and VRG-DC measurements and returns a
positive result for the VTR-DC measurement if the tip wire
is more positive than the ring wire. ";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR, MELT-FVDC-TG,
        MELT-FVDC-RG)";

    }

    typedef foreign-ac-voltage {
      type uint16 {
        range "0..2500";
      }
      units "100 mVrms";
      description
        "The range of valid values for the foreign AC voltages
VTR-AC (Tip-to-Ring), VTG-AC (Tip-to-Ground), and VRG-AC
(Ring-To-Ground) is from 0 to 250Vrms. The foreign AC voltage
shall be represented in linear format with a granularity of
100 mV.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR, MELT-FVAC-TG,
        MELT-FVAC-RG)";

    }

    typedef foreign-ac-voltage-frequency {
      type uint16 {
        range "100..900";
      }
      units "0.1 Hz";
      description
        "The range of valid values for the foreign AC voltage FTR-AC
(Tip-to-Ring), FTG-AC (Tip-to-Ground), and FRG-AC
(Ring-To-Ground) is from 10 to 90 Hz with a granularity
of 0.1 Hz.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR, MELT-FVACF-TG,
        MELT-FVACF-RG)";

    }

    typedef loop-resistance {
      type uint32 {
        range "0..10000000";
      }
      units "1 ohm";
      description
        "The loop resistances RTF-HV (Tip-to-Ring) and RRT-HV
(Ring-to-Tip) shall be represented in linear format. The range
of valid values is from 0 to 10 Mohms with a granularity of 1
ohm. The RTR-HV and RRT-HV values of the loop resistance with
high metallic voltage test are the total resistances measured.
The RTR and RRT values obtained from the 3-element resistance
with controlled metallic voltage test are not subtracted from
the results.";
      reference
        "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR, MELT-HDCR-RT)";

    }

    typedef dc-test-voltage {
      type int16 {
        range "-1500..1500";
      }
      units "0.1 V";
      description
        "The test voltages for the measurement of the 4-element DC
resistance, VDCTR (Tip-to-Ring), VDCRT (Ring-to-Tip), VDCTG
(Tip-to-Ground), and VDCRG (Ring-to-Ground), shall be
represented in linear format. The range of valid values is from
-150 V to +150 V with a granularity of 0.1 V.";
      reference
        "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR, MELT-CDCV-RT,
        MELT-CDCV-TG, MELT-CDCV-RG)";

    }

    typedef test-current {
      type int32 {
        range "-1000000..1000000";
      }
      units "1 uA";
      description
        "The test currents for the measurement of the 4-element DC
resistance, IDCTR (Tip-to-Ring), IDCRT (Ring-to-Tip),
IDCTG (Tip-to-Ground), and IDCRG (Ring-to-Ground), shall be
represented in linear format. The range of valid values is from
-1 A to +1 A with a granularity of 1 uA.";
      reference
        "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR, MELT-CDCI-RT,
        MELT-CDCI-TG, MELT-CDCI-RG)";

    }

    typedef loop-resistance-test-voltage {
      type int16 {
        range "-1500..1500";
      }
      units "0.1 V";
      description
        "The test voltages for the measurement of the loop resistance
with a high metallic voltage, VDCHTR (Tip-to-Ring) and
VDCHRT (Ring-to-Tip) shall be represented in linear format.
The range of valid values is from -150 V to +150 V with a
granularity of 0.1 V.";
      reference
        "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR, MELT-HDCV-RT)";

    }

    typedef measurement-voltage {
      type uint16 {
        range "0..1500";
      }
      units "0.1 V";
      description
        "The range of valid values for the AC voltages VACTR-CC
(Tip-to-Ring), VACTG-CC (Tip-to-Ground), and VACRG-CC
(Ring-to-Ground) for the 3-element capacitance test with
a controlled metallic voltage is from 0 V rms to 150 V rms.
The values shall be represented in linear format with a
granularity of 0.1 V.

The range of valid values for the AC voltage VACTR-HC for the
loop capacitance test with a high metallic voltage is from 0
Vrms to 150 Vrms. The values shall be represented in linear
format with a granularity of 0.1 V.

The range of valid values for the AC voltages VACTR-CA,
VACTG-CA, and VACRG-CA for the 3-element complex admittance
test with a controlled metallic voltage is from 0 Vrms to 150
Vrms. The values shall be represented in linear format with a
granularity of 0.1 V.

The range of valid values for the AC voltage VACTR-HA for the
loop complex admittance test with a high metallic voltage is
from 0 V rms to 150 V rms. The values shall be represented in
linear format with a granularity of 0.1 V.";
      reference
        "ITU-T G.996.2 clauses E.2.3.11 (MELT-ACV-CC-TR,
        MELT-ACV-CC-TG, MELT-ACV-CC-RG); E.2.3.12 (MELT-ACV-HC-TR);
        E.2.3.13 (MELT-ACV-CA-TR, MELT-ACV-CA-TG, MELT-ACV-CA-RG);
        E.2.3.14 (MELT-ACV-HA-TR); and E.2.2.3 (MELT-HCA-V)";

    }

    typedef complex-admittance {
      type uint32 {
        range "1..1000000";
      }
      units "0.1 uSiemens";
      description
        "The range of valid values for the 3-element complex
conductances and susceptances, GTR and BTR (Tip-to-Ring);
GTG and BTG (Tip-to-Ground); and GRG and BRG (Ring-to-Ground)
is from 0.1 uSiemens to 0.1 Siemens. The values shall be
represented in linear format with a granularity of 0.1
uSiemens.

NOTE - The linear format is chosen for simplicity reason and
does not imply any future accuracy requirements.";
      reference
        "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR, MELT-CAB-TR,
        MELT-CAG-TG, MELT-CAB-TG, MELT-CAG-RG, MELT-CAB-RG)";

    }

    typedef loop-complex-admittance {
      type uint32 {
        range "1..1000000";
      }
      units "0.1 uSiemens";
      description
        "The range of valid values for the 3-element complex
conductance and susceptance GTR,HV and BTR,HV (Tip-to-Ring) is
from 0.1 uSiemens to 0.1 Siemens. The values shall be
represented in linear format with a granularity of 0.1
uSiemens. The GTR,HV and BTR,HV values of the loop complex
admittance with high metallic voltage test are the total
conductance and susceptance measured. The GTR and BTR values
obtained from the 3-element complex admittance with controlled
metallic voltage test are not subtracted from the results.

NOTE - The linear format is chosen for simplicity reason and
does not imply any future accuracy requirements.";
      reference
        "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR, MELT-HAB-TR)";

    }

    grouping pmd-measurement-parameters {
      description
        "Defines the Metallic Line Test Physical Medium Dependent
(MELT-PMD) measurement parameters.";
      leaf four-element-dc-resistance-tr {
        type four-element-dc-resistance;
        description
          "The 4-element DC resistance with controlled metallic
voltage, RTR (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR)";

      }

      leaf four-element-dc-resistance-rt {
        type four-element-dc-resistance;
        description
          "The 4-element DC resistance with controlled metallic
voltage, RRT (Ring-to-Tip)";
        reference
          "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RT)";

      }

      leaf four-element-dc-resistance-tg {
        type four-element-dc-resistance;
        description
          "The 4-element DC resistance with controlled metallic
voltage, RTG (Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TG)";

      }

      leaf four-element-dc-resistance-rg {
        type four-element-dc-resistance;
        description
          "The 4-element DC resistance with controlled metallic
voltage, RRG (Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RG)";

      }

      leaf three-element-capacitance-tr {
        type three-element-capacitance;
        description
          "The 3-element capacitance with controlled metallic voltage,
CTR (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR)";

      }

      leaf three-element-capacitance-tg {
        type three-element-capacitance;
        description
          "The 3-element capacitance with controlled metallic voltage,
CTG (Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TG)";

      }

      leaf three-element-capacitance-rg {
        type three-element-capacitance;
        description
          "The 3-element capacitance with controlled metallic voltage,
CRG (Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-RG)";

      }

      leaf foreign-dc-voltage-tr {
        type foreign-dc-voltage;
        description
          "The foreign DC voltage, VTR-DC (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR)";

      }

      leaf foreign-dc-voltage-tg {
        type foreign-dc-voltage;
        description
          "The foreign DC voltage, VTG-DC (Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TG)";

      }

      leaf foreign-dc-voltage-rg {
        type foreign-dc-voltage;
        description
          "The foreign DC voltage, VRG-DC (Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-RG)";

      }

      leaf foreign-ac-voltage-tr {
        type foreign-ac-voltage;
        description
          "The foreign AC voltage, VTR-AC (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR)";

      }

      leaf foreign-ac-voltage-tg {
        type foreign-ac-voltage;
        description
          "The foreign AC voltage, VTG-AC (Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TG)";

      }

      leaf foreign-ac-voltage-rg {
        type foreign-ac-voltage;
        description
          "The foreign AC voltage, VRG-AC (Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-RG)";

      }

      leaf foreign-ac-voltage-frequency-tr {
        type foreign-ac-voltage-frequency;
        description
          "The foreign AC voltage frequency for VTR-AC (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR)";

      }

      leaf foreign-ac-voltage-frequency-tg {
        type foreign-ac-voltage-frequency;
        description
          "The foreign AC voltage frequency for VTG-AC
(Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TG)";

      }

      leaf foreign-ac-voltage-frequency-rg {
        type foreign-ac-voltage-frequency;
        description
          "The foreign AC voltage frequency for VRG-AC
(Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-RG)";

      }

      leaf loop-capacitance-hv-tr {
        type int32 {
          range "-20000..50000";
        }
        units "0.1 nF";
        description
          "The loop capacitance CTR-HV (Tip-to-Ring) shall be
represented in linear format. The range of valid values is
from -2 to 5 uF with a granularity of 0.1 nF. The CTR-HV
value of the loop capacitance with high metallic voltage test
is the total capacitance measured. The CTR value obtained
from the 3-element capacitance with controlled metallic
voltage test is not subtracted from the results.";
        reference
          "ITU-T G.996.2 clause E.2.3.6 (MELT-HV-TR)";

      }

      leaf loop-resistance-hv-tr {
        type loop-resistance;
        description
          "The loop resistance with high metallic voltage, RTR-HV
(Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR)";

      }

      leaf loop-resistance-hv-rt {
        type loop-resistance;
        description
          "The loop resistance with high metallic voltage, RRT-HV
(Ring-to-Tip)";
        reference
          "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-RT)";

      }

      leaf four-element-dc-resistance-test-voltage-tr {
        type dc-test-voltage;
        description
          "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-TR
(Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR)";

      }

      leaf four-element-dc-resistance-test-voltage-rt {
        type dc-test-voltage;
        description
          "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-RT
(Ring-to-Tip)";
        reference
          "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RT)";

      }

      leaf four-element-dc-resistance-test-voltage-tg {
        type dc-test-voltage;
        description
          "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-TG
(Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TG)";

      }

      leaf four-element-dc-resistance-test-voltage-rg {
        type dc-test-voltage;
        description
          "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-RG
(Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RG)";

      }

      leaf four-element-dc-resistance-test-current-tr {
        type test-current;
        description
          "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-TR
(Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR)";

      }

      leaf four-element-dc-resistance-test-current-rt {
        type test-current;
        description
          "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-RT
(Ring-to-Tip)";
        reference
          "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RT)";

      }

      leaf four-element-dc-resistance-test-current-tg {
        type test-current;
        description
          "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-TG
(Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TG)";

      }

      leaf four-element-dc-resistance-test-current-rg {
        type test-current;
        description
          "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-RG
(Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RG)";

      }

      leaf loop-resistance-test-voltage-tr {
        type loop-resistance-test-voltage;
        description
          "The test voltage for the measurement of the loop resistance
with a high metallic voltage VDCH-TR (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR)";

      }

      leaf loop-resistance-test-voltage-rt {
        type loop-resistance-test-voltage;
        description
          "The test voltage for the measurement of the loop resistance
with a high metallic voltage VDCH-RT (Ring-to-Tip)";
        reference
          "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-RT)";

      }

      leaf three-element-complex-admittance-real-tr {
        type complex-admittance;
        description
          "The real part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR)";

      }

      leaf three-element-complex-admittance-imaginary-tr {
        type complex-admittance;
        description
          "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TR)";

      }

      leaf three-element-complex-admittance-real-tg {
        type complex-admittance;
        description
          "The real part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TG)";

      }

      leaf three-element-complex-admittance-imaginary-tg {
        type complex-admittance;
        description
          "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TG)";

      }

      leaf three-element-complex-admittance-real-rg {
        type complex-admittance;
        description
          "The real part of the 3-element complex admittance
with controlled metallic voltage (Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-RG)";

      }

      leaf three-element-complex-admittance-imaginary-rg {
        type complex-admittance;
        description
          "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Ring-to-Ground)";
        reference
          "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-RG)";

      }

      leaf loop-complex-admittance-real-hv-tr {
        type loop-complex-admittance;
        description
          "The real part of the loop complex admittance with high
metallic voltage (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR)";

      }

      leaf loop-complex-admittance-imaginary-hv-tr {
        type loop-complex-admittance;
        description
          "The imaginary part of the loop complex admittance with high
metallic voltage (Tip-to-Ring)";
        reference
          "ITU-T G.996.2 clause E.2.3.10 (MELT-HAB-TR)";

      }

      leaf three-element-capacitance-measurement-voltage-tr {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACTR-CC
for the 3-element capacitance test with a controlled metallic
voltage is from 0 V rms to 150 V rms. The values shall be
represented in linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TR)";

      }

      leaf three-element-capacitance-measurement-voltage-tg {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACTG-CC
for the 3-element capacitance test with a controlled metallic
voltage is from 0 V rms to 150 V rms. The values shall be
represented in linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TG)";

      }

      leaf three-element-capacitance-measurement-voltage-rg {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACRG-CC
for the 3-element capacitance test with a controlled metallic
voltage is from 0 V rms to 150 V rms. The values shall be
represented in linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-RG)";

      }

      leaf loop-capacitance-measurement-voltage-tr {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACTR-HC for the
loop capacitance test with a high metallic voltage is from 0
V rms to 150 V rms. The values shall be represented in linear
format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.12 (MELT-ACV-HC-TR)";

      }

      leaf three-element-complex-admittance-measurement-voltage-tr {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACTR-CA for the
3-element complex admittance test with a controlled metallic
voltage is from 0 V rms to 150 V rms. The values shall be
represented in linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TR)";

      }

      leaf three-element-complex-admittance-measurement-voltage-tg {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACTG-CA for the
3-element complex admittance test with a controlled metallic
voltage is from 0 V rms to 150 V rms. The values shall be
represented in linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TG)";

      }

      leaf three-element-complex-admittance-measurement-voltage-rg {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACRG-CA for the
3-element complex admittance test with a controlled metallic
voltage is from 0 V rms to 150 V rms. The values shall be
represented in linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-RG)";

      }

      leaf loop-complex-admittance-measurement-voltage-tr {
        type measurement-voltage;
        description
          "The range of valid values for the AC voltage VACTR-HA for the
loop complex admittance test with a high metallic voltage is
from 0 V rms to 150 V rms. The values shall be represented in
linear format with a granularity of 0.1 V.";
        reference
          "ITU-T G.996.2 clause E.2.3.14 (MELT-ACV-HA-TR)";

      }

      leaf unreliability-indicator {
        if-feature melt-pmd-measurement-parameter-reliability;
        type bits {
          bit
            four-element-dc-resistance-tr {
            position 0;
            description
              "The 4-element DC resistance with controlled metallic
voltage, RTR (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR)";

          }
          bit
            four-element-dc-resistance-rt {
            position 1;
            description
              "The 4-element DC resistance with controlled metallic
voltage, RRT (Ring-to-Tip).";
            reference
              "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RT)";

          }
          bit
            four-element-dc-resistance-tg {
            position 2;
            description
              "The 4-element DC resistance with controlled metallic
voltage, RTG (Tip-to-Ground.)";
            reference
              "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TG)";

          }
          bit
            four-element-dc-resistance-rg {
            position 3;
            description
              "The 4-element DC resistance with controlled metallic
voltage, RRG (Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RG)";

          }
          bit three-element-capacitance-tr {
            position 4;
            description
              "The 3-element capacitance with controlled metallic
voltage, CTR (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR)";

          }
          bit three-element-capacitance-tg {
            position 5;
            description
              "The 3-element capacitance with controlled metallic
voltage, CTG (Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TG)";

          }
          bit three-element-capacitance-rg {
            position 6;
            description
              "The 3-element capacitance with controlled metallic
voltage, CRG (Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-RG)";

          }
          bit foreign-dc-voltage-tr {
            position 7;
            description
              "The foreign DC voltage, VTR-DC (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR)";

          }
          bit foreign-dc-voltage-tg {
            position 8;
            description
              "The foreign DC voltage, VTG-DC (Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TG)";

          }
          bit foreign-dc-voltage-rg {
            position 9;
            description
              "The foreign DC voltage, VRG-DC (Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-RG)";

          }
          bit foreign-ac-voltage-tr {
            position 10;
            description
              "The foreign AC voltage, VTR-AC (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR)";

          }
          bit foreign-ac-voltage-tg {
            position 11;
            description
              "The foreign AC voltage, VTG-AC (Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TG)";

          }
          bit foreign-ac-voltage-rg {
            position 12;
            description
              "The foreign AC voltage, VRG-AC (Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-RG)";

          }
          bit
            foreign-ac-voltage-frequency-tr {
            position 13;
            description
              "The foreign AC voltage frequency for VTR-AC
(Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR)";

          }
          bit
            foreign-ac-voltage-frequency-tg {
            position 14;
            description
              "The foreign AC voltage frequency for VTG-AC
(Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TG)";

          }
          bit
            foreign-ac-voltage-frequency-rg {
            position 15;
            description
              "The foreign AC voltage frequency for VRG-AC
(Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-RG)";

          }
          bit loop-capacitance-hv-tr {
            position 16;
            description
              "The loop capacitance CTR-HV (Tip-to-Ring) shall be
represented in linear format. The range of valid values
is from 0 to 5 uF with a granularity of 0.1 nF. The
CTR-HV value of the loop capacitance with high metallic
voltage test is the total capacitance measured. The CTR
value obtained from the 3-element capacitance with
controlled metallic voltage test is not subtracted from
the results.";
            reference
              "ITU-T G.996.2 clause E.2.3.6 (MELT-HV-TR)";

          }
          bit loop-resistance-hv-tr {
            position 17;
            description
              "The loop resistance with high metallic voltage, RTR-HV
(Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR.";

          }
          bit loop-resistance-hv-rt {
            position 18;
            description
              "The loop resistance with high metallic voltage, RRT-HV
(Ring-to-Tip).";
            reference
              "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-RT)";

          }
          bit
            four-element-dc-resistance-test-voltage-tr {
            position 19;
            description
              "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-TR
(Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR)";

          }
          bit
            four-element-dc-resistance-test-voltage-rt {
            position 20;
            description
              "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-RT
(Ring-to-Tip).";
            reference
              "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RT)";

          }
          bit
            four-element-dc-resistance-test-voltage-tg {
            position 21;
            description
              "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-TG
(Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TG)";

          }
          bit
            four-element-dc-resistance-test-voltage-rg {
            position 22;
            description
              "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-RG
(Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RG)";

          }
          bit
            four-element-dc-resistance-test-current-tr {
            position 23;
            description
              "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-TR
(Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR)";

          }
          bit
            four-element-dc-resistance-test-current-rt {
            position 24;
            description
              "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-RT
(Ring-to-Tip).";
            reference
              "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RT)";

          }
          bit
            four-element-dc-resistance-test-current-tg {
            position 25;
            description
              "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-TG
(Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TG)";

          }
          bit
            four-element-dc-resistance-test-current-rg {
            position 26;
            description
              "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-RG
(Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RG)";

          }
          bit
            loop-resistance-test-voltage-tr {
            position 27;
            description
              "The test voltage for the measurement of the loop
resistance with a high metallic voltage VDCH-TR
(Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR)";

          }
          bit
            loop-resistance-test-voltage-rt {
            position 28;
            description
              "The test voltage for the measurement of the loop
resistance with a high metallic voltage VDCH-RT
(Ring-to-Tip).";
            reference
              "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-RT)";

          }
          bit
            three-element-complex-admittance-real-tr {
            position 29;
            description
              "The real part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR)";

          }
          bit
            three-element-complex-admittance-imaginary-tr {
            position 30;
            description
              "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TR)";

          }
          bit
            three-element-complex-admittance-real-tg {
            position 31;
            description
              "The real part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TG)";

          }
          bit
            three-element-complex-admittance-imaginary-tg {
            position 32;
            description
              "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TG)";

          }
          bit
            three-element-complex-admittance-real-rg {
            position 33;
            description
              "The real part of the 3-element complex admittance
with controlled metallic voltage (Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-RG)";

          }
          bit
            three-element-complex-admittance-imaginary-rg {
            position 34;
            description
              "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-RG)";

          }
          bit
            loop-complex-admittance-real-hv-tr {
            position 35;
            description
              "The real part of the loop complex admittance with high
metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR)";

          }
          bit
            loop-complex-admittance-imaginary-hv-tr {
            position 36;
            description
              "The imaginary part of the loop complex admittance with
high metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.10 (MELT-HAB-TR)";

          }
          bit
            three-element-capacitance-measurement-voltage-tr {
            position 37;
            description
              "The AC voltage, VACTR-CC, for the 3-element capacitance
test with a controlled metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TR)";

          }
          bit
            three-element-capacitance-measurement-voltage-tg {
            position 38;
            description
              "The AC voltage, VACTG-CC, for the 3-element capacitance
test with a controlled metallic voltage
(Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TG)";

          }
          bit
            three-element-capacitance-measurement-voltage-rg {
            position 39;
            description
              "The AC voltage, VACRG-CC, for the 3-element capacitance
test with a controlled metallic voltage
(Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-RG)";

          }
          bit
            loop-capacitance-measurement-voltage-tr {
            position 40;
            description
              "The AC voltage, VACTR-HC, for the loop capacitance test
with a high metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.12 (MELT-ACV-HC-TR)";

          }
          bit
            three-element-complex-admittance-measurement-voltage-tr {
            position 41;
            description
              "The AC voltage, VACTR-CA, for the 3-element complex
admittance test with a controlled metallic voltage
(Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TR)";

          }
          bit
            three-element-complex-admittance-measurement-voltage-tg {
            position 42;
            description
              "The AC voltage, VACTG-CA, for the 3-element complex
admittance test with a controlled metallic voltage
(Tip-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TG)";

          }
          bit
            three-element-complex-admittance-measurement-voltage-rg {
            position 43;
            description
              "The AC voltage, VACRG-CA, for the 3-element complex
admittance test with a controlled metallic voltage
(Ring-to-Ground).";
            reference
              "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-RG)";

          }
          bit
            loop-complex-admittance-measurement-voltage-tr {
            position 44;
            description
              "The AC voltage, VACTR-HA, for the loop complex admittance
test with a high metallic voltage (Tip-to-Ring).";
            reference
              "ITU-T G.996.2 clause E.2.3.14 (MELT-ACV-HA-TR)";

          }
        }
        description
          "The unreliability indicator provides the set of parameters
whose data can be considered to be unreliable.

Possible reasons that the data is unreliable:
  - The measurement may not have been able to run, possibly
    due to external conditions.
  - The result is not reliable as the accuracy may be
    degraded due to external conditions.";
        reference
          "ITU-T G.996.2 clause E.2.2.15 (Reliability indicator)";

      }
    }  // grouping pmd-measurement-parameters
  }  // submodule bbf-melt-pmd-measurement-parameter-body